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MICRONAS
HAL114, HAL115 Hall Effect Sensor Family
Edition Dec. 20, 1999 6251-456-2DS
MICRONAS
HAL11x
Contents Page 3 3 3 3 4 4 4 4 5 5 5 5 6 6 7 8 10 10 12 14 14 14 14 14 16 Section 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 2. 3. 3.1. 3.2. 3.3. 3.4. 3.5. 3.6. 3.7. 4. 4.1. 4.2. 5. 5.1. 5.2. 5.3. 5.4. 6. Title Introduction Features Family Overview Marking Code Operating Junction Temperature Range Hall Sensor Package Codes Solderability Functional Description Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Recommended Operating Conditions Electrical Characteristics Magnetic Characteristics Type Descriptions HAL114 HAL115 Application Notes Application Circuit Ambient Temperature Extended Operating Conditions Start-up Behavior Data Sheet History
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Micronas
HAL11x
Hall Effect Sensor Family in CMOS technology Release Notes: Revision bars indicate significant changes to the previous edition. 1. Introduction The HAL 11x family consists of different Hall switches produced in CMOS technology. All sensors include a temperature-compensated Hall plate, a comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the output transistor is switched on or off. The sensors of this family differ in the switching behavior. The sensors are designed for industrial and automotive applications and operate with supply voltages from 4.5 V to 24 V in the ambient temperature range from -40 C up to 125 C. All sensors are available in an SMD-package (SOT-89B) and in a leaded version (TO-92UA). 1.1. Features 1.3. Marking Code - operates from 4.5 V to 24 V supply voltage - overvoltage protection - reverse-voltage protection at VDD-pin - short-circuit protected open-drain output by thermal shut down - operates with static magnetic fields and dynamic magnetic fields up to 20 kHz - stable switching points over a wide supply voltage range - the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics HAL114 HAL115 All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type K 114K 115K Temperature Range E 114E 115E C 114C 115C 1.2. Family Overview The types differ according to the mode of switching. Type HAL114 HAL115 Switching Behavior unipolar bipolar see Page 10 12
Bipolar Switching Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output state is not defined for all sensors if the magnetic field is removed again. Some sensors will change the output state and some sensors will not. Unipolar Switching Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side.
Micronas
3
HAL11x
1.4. Operating Junction Temperature Range The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). K: TJ = -40 C to +140 C E: TJ = -40 C to +100 C C: TJ = 0 C to +100 C The relationship between ambient temperature (TA) and junction temperature is explained in section 5.2. on page 14. 1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: K, E, or C Package: SF for SOT-89B UA for TO-92UA (SO for SOT-89A) Type: 11x Example: HAL114UA-E Type: 114 Package: TO-92UA Temperature Range: TJ = -40 C to +100 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Ordering Codes for Hall Sensors". 1.6. Solderability all packages: according to IEC68-2-58 During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 C and 90% relative humidity.
VDD 1 OUT
VDD 1 Reverse Voltage & Overvoltage Protection
2. Functional Description The HAL 11x sensors are monolithic integrated circuits which switch in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching behavior of output without bouncing. Shunt protection devices clamp voltage peaks at the Output-pin and VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to -15 V. No external reverse protection diode is needed at the VDD-pin for reverse voltages ranging from 0 V to -15 V. HAL11x
Temperature Dependent Bias Hysteresis Control Short Circuit & Overvoltage Protection
Hall Plate
Comparator Output
OUT 3
GND 2
Fig. 2-1: HAL11x block diagram
3
2 GND
Fig. 1-1: Pin configuration
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Micronas
HAL11x
3. Specifications 3.1. Outline Dimensions
4.55 0.1 x1 0.125 0.7 1.7 0.48 2 y 0.55 4 0.2 min. 0.25 1 0.4 0.4 1.5 (2.54) 3.0 branded side branded side 45
SPGS7002-7-A/2E
1.5 0.05 0.3
4.06 0.1 sensitive area x1 x2 y 3.05 0.1
x2
sensitive area 3.1 0.2 1 2 3 0.75 0.2 0.42 1.27 1.27 14.0 min. 0.8
2.6 0.1 top view 2 3 0.4
0.36
1.53 0.05
0.06 0.04
SPGS7001-7-A3/2E
Fig. 3-1: Plastic Small Outline Transistor Package (SOT-89A) Weight approximately 0.04 g Dimensions in mm Note: The SOT-89A package will be discontinued in 2000 and be replaced by the SOT-89B package.
Fig. 3-3: Plastic Transistor Single Outline Package (TO-92UA) Weight approximately 0.12 g Dimensions in mm
Note: For all package diagrams, a mechanical tolerance of 50 m applies to all dimensions where no tolerance is explicitly given.
4.55 0.1 x1 0.125 0.3 1.7 2 y x2 sensitive area
3.2. Dimensions of Sensitive Area 0.4 mm x 0.2 mm 3.3. Positions of Sensitive Areas
4 0.2 min. 0.25 1 0.4 0.4 1.5 3.0 2 3 0.4
2.55 0.1 top view
SOT-89A
SOT-89B |x2 - x1| / 2 < 0.2 mm
TO-92UA
1.15 0.05
y = 0.98 mm 0.2 mm
y = 0.95 mm 0.2 mm
y = 1.0 mm 0.2 mm
branded side
0.06 0.04
SPGS0022-3-A3/2E
Fig. 3-2: Plastic Small Outline Transistor Package (SOT-89B) Weight approximately 0.035 g Dimensions in mm
Micronas
5
HAL11x
3.4. Absolute Maximum Ratings Symbol VDD -VP -IDD IDDZ, IOZ VO IO IOmax TS TJ Parameter Supply Voltage Test Voltage for Supply Reverse Supply Current Current through Protection Devices Output Voltage Continuous Output On Current Peak Output On Current Storage Temperature Range Junction Temperature Range Pin No. 1 1 1 1 or 3 3 3 3 Min. -15 -242) - -2003) -0.3 - - -65 -40 Max. 281) - 501) 2003) 281) 301) 2503) 150 150 Unit V V mA mA V mA mA C C
1) as long as T max is not exceeded J 2) with a 220 series resistor at pin 1 3) t < 2 ms
Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions/Characteristics" of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.
3.5. Recommended Operating Conditions Symbol VDD IO VO RV
1)
Parameter Supply Voltage Continuous Output On Current Output Voltage (output switched off) Series Resistor1)
Pin No. 1 3 3 1
Min. 4.5 0 0
Max. 24 20 24 270
Unit V mA V
see Fig. 5-1 on page 14
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Micronas
HAL11x
3.6. Electrical Characteristics at TJ = -40 C to +140 C , VDD = 4.5 V to 24 V, as not otherwise specified in Conditions Typical Characteristics for TJ = 25 C and VDD = 12 V
Symbol IDD IDD VOL VOL IOH IOH ten(O) Parameter Supply Current Supply Current over Temperature Range Output Voltage over Temperature Range Output Voltage over Temperature Range Output Leakage Current Pin No. 1 1 Min. 6 3.9 Typ. 8.2 8.2 Max. 11 12 Unit mA mA Conditions TJ = 25 C
3
-
120
400
mV
IOL = 12.5 mA IOL = 20 mA B < Boff, TJ = 25 C, VOH = 0 to 24 V B < Boff, VOH = 0 to 24 V VDD = 12 V B > BON + 2 mT or B < BOFF - 2 mT VDD = 12 V, RL = 820 Ohm, CL = 20 pF VDD = 12 V, RL = 820 Ohm, CL = 20 pF Fiberglass Substrate 30 mm x 10 mm x 1.5mm, pad size see Fig. 3-4
3
-
190
500
mV A A s
3
-
0.06
1
Output Leakage Current over Temperature Range Enable Time of Output after Setting of VDD
3
-
-
10
1
-
6
10
tr tf RthJSB case SOT-89A SOT-89B RthJA case TO-92UA
Output Rise Time
3
-
0.08
0.4
s s
Output Fall Time
3
-
0.06
0.4
Thermal Resistance Junction to Substrate Backside
-
-
150
200
K/W
Thermal Resistance Junction to Soldering Point
-
-
150
200
K/W
5.0
2.0
2.0
1.0
Fig. 3-4: Recommended pad size SOT-89x Dimensions in mm
Micronas
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HAL11x
3.7. Magnetic Characteristics at TJ = -40 C to +140 C, VDD = 4.5 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.
Sensor Switching type HAL 114 unipolar Parameter TJ -40 C 25 C 140 C HAL 115 bipolar -40 C 25 C 140 C Min. 7.5 7 6.1 -10.7 -10.7 -10.7 On point BON Typ. 21.5 21.1 19.4 1.4 1.2 0.9 Max. 36 34 31.3 12.5 12.5 12.5 Min. 4.3 4 3.6 -12.5 -12.5 -12.5 Off point BOFF Typ. 17.4 17.1 16.1 -1.4 -1.2 -0.9 Max. 33.2 31.2 28.8 10.7 10.7 10.7 Hysteresis BHYS Min. 2.8 2.8 2.2 1.8 1.8 1 Typ. 4.1 4 3.3 2.8 2.4 1.8 Max. 5 4.5 4 7 7 7 mT mT mT mT mT mT Unit
Note: For detailed descriptions of the individual types, see pages 10 and following. The magnetic limits given above refer to parts in the original packaging. Mechanical stress on the hall sensitive areas on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching points. This behavior is a physical phenomenon and not a malfunction of the sensor. Mechanical stress on the hall plates can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering or operating the parts at extreme temperatures. Please use a sensor of the HAL 5xx family if higher robustness against mechanical stress is required.
mA 15
HAL 11x
mA 12
HAL 11x
IDD
10
TA = -40 C TA = 25 C
IDD
10
TA = -40 C TA = 25 C
5
TA = 140 C
8 TA = 140 C
0
6
-5
4
-10
2
-15 -15 -10 -5
0
5
10 15 20 25 30 V VDD
0
0
1
2
3
4 VDD
5
6V
Fig. 3-5: Typical supply current versus supply voltage
Fig. 3-6: Typical supply current versus supply voltage
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Micronas
HAL11x
mA 12
HAL 11x
mV 500
HAL 11x
VDD = 12 V
IDD
10 VDD = 4.5 V 8 VDD = 24 V 6
VOL 400
300 IO = 20 mA
200 4 IO = 12.5 mA 100
2
0 -50
0
50
100 TA
150 C
0 -50
0
50
100 TA
150 C
Fig. 3-7: Typical supply current versus temperature
Fig. 3-9: Typical output low voltage versus temperature
mV 500
HAL 11x
IO = 12.5 mA
A 2 10 1 10 0 10
HAL 11x
VOH = 24 V VDD = 5 V
VOL 400
IOH
300 TA = 140 C 200 TA = 25 C 100 TA = -40 C 0
-1 10 -2 10 -3 10 -4 10
0
5
10
15
20
25 VDD
30 V
-50
0
50
100 TA
150 C
Fig. 3-8: Typical output low voltage versus supply voltage
Fig. 3-10: Typical output leakage current versus temperature
Micronas
9
HAL114
4. Type Description 4.1. HAL 114 The HAL 114 is a unipolar switching sensor (see Fig. 4-1). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: - switching type: unipolar - typical BON: 21.1 mT at room temperature - typical BOFF: 17.1 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 20 kHz 0 BOFF BON B Fig. 4-1: Definition of magnetic switching points for the HAL 114 Applications The HAL 114 is the optimal sensor for applications with one magnetic polarity such as: - solid state switches, - contactless solution to replace micro switches, - position and end-point detection, and - rotating speed measurement.
Output Voltage VO BHYS VOL
Magnetic Characteristics at TJ = -40 C to +140 C, VDD = 4.5 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter TJ -40 C 25 C 100 C 140 C Min. 7.5 7 6.3 6.1 On point BON Typ. 21.5 21.1 19.9 19.4 Max. 36 34 31.5 31.3 Min. 4.3 4 3.6 3.6 Off point BOFF Typ. 17.4 17.1 16.4 16.1 Max. 33.2 31.2 28.9 28.8 Min. 2.8 2.8 2.6 2.2 Hysteresis BHYS Typ. 4.1 4 3.5 3.3 Max. 5 4.5 4 4 mT mT mT mT Unit
The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic limits given above refer to parts in the original packaging. Mechanical stress on the hall sensitive areas on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching points. This behavior is a physical phenomenon and not a malfunction of the sensor. Mechanical stress on the hall plates can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering or operating the parts at extreme temperatures. Please use a sensor of the HAL 5xx family if a robustness against mechanical stress is required.
10
Micronas
HAL114
mT 30 BON BOFF
HAL 114
mT 30
HAL 114
VDD = 12 V
25
BON BOFF 25 BON
20
20 BOFF
15 TA = -40 C TA = 25 C TA = 140 C 5
15
10
10
5
0
0
5
10
15
20
25 VDD
30 V
0 -50
0
50
100 TA
150 C
Fig. 4-2: Typical magnetic switching points versus supply voltage
Fig. 4-4: Typical magnetic switching points versus temperature
mT 30 BON BOFF
HAL 114
25
20
15 TA = -40 C TA = 25 C TA = 140 C 5
10
0
3
4
5 VDD
6V
Fig. 4-3: Typical magnetic switching points versus supply voltage
Micronas
11
HAL115
4.2. HAL 115 The HAL 115 is a bipolar switching sensor (see Fig. 4-5). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output state is not defined for all sensors if the magnetic field is removed again. Some sensors will change the output state and some sensors will not. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Magnetic Features: - switching type: bipolar - high sensitivity - typical BON: 1.2 mT at room temperature - typical BOFF: -1.2 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 20 kHz BOFF 0 BON VOL B Applications The HAL 115 is the optimal sensor for all applications with alternating magnetic signals at the sensor position such as: - rotating speed measurement, - commutation of brushless DC-motors and cooling fans.
Output Voltage VO BHYS
Fig. 4-5:Definition of magnetic switching points for the HAL115
Magnetic Characteristics at TJ = -40 C to +140 C, VDD = 4.5 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter TJ -40 C 25 C 100 C 140 C Min. -10.7 -10.7 -10.7 -10.7 On point BON Typ. 1.4 1.2 1 0.9 Max. 12.5 12.5 12.5 12.5 Min. -12.5 -12.5 -12.5 -12.5 Off point BOFF Typ. -1.4 -1.2 -1 -0.9 Max. 10.7 10.7 10.7 10.7 Min. 1.8 1.8 1.5 1 Hysteresis BHYS Typ. 2.8 2.4 2 1.8 Max. 7 7 7 7 mT mT mT mT Unit
The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic limits given above refer to parts in the original packaging. Mechanical stress on the hall sensitive areas on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching points. This behavior is a physical phenomenon and not a malfunction of the sensor. Mechanical stress on the hall plates can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering or operating the parts at extreme temperatures. Please use a sensor of the HAL 5xx family if higher robustness against mechanical stress is required.
12
Micronas
HAL115
mT 6
HAL 115
VDD = 12 V
BON, 4 BOFF
2 BON 0 BOFF
-2
-4
-6 -50
0
50
100 TA
150 C
Fig. 4-6:Typical magnetic switching points versus ambient temperature
Micronas
13
HAL11x
5. Application Notes 5.1. Application Circuit The HAL 11x sensors can operate without external components. For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 5-1). The series resistor and the capacitor should be placed as closely as possible to the sensor.
RV 220 1
VDD
5.2. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + T At static conditions, the following equation is valid: T = IDD * VDD * Rth For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application.
VDD OUT 3 RL
For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: TAmax = TJmax - T 5.3. Extended Operating Conditions All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 6). Please use the sensors of the HAL 5xx family if lower operation voltage, lower current consumption or tighter magnetic specifications required. 5.4. Start-up Behavior
4.7 nF 2 GND
Fig. 5-1: Recommended application circuit
VDD
L1 3.3 k R1 R2 3.3 k
L2
1 HAL115 3 2
The sensors have an initialization time (enable time ten(O)) after applying the supply voltage. This parameter ten(O) is specified in the Electrical Characteristics (see page 7). During the initialization time, the output state is not defined and can toggle. After ten(O), the output will be low if the applied magnetic field B is above BON or high if B is below BOFF. For magnetic fields between BOFF and BON, the output state of the HAL sensor after applying VDD will be either low or high. In order to achieve a well-defined output state, the applied magnetic field must be above BONmax, respectively, below BOFFmin.
2.2 /50 V C1
2.2 /50 V C2
Fig. 5-2: Recommended application circuit for DC fans
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Micronas
HAL11x
Micronas
15
HAL11x
6. Data Sheet History 1. Final data sheet: "HAL114 Unipolar Hall Switch IC", June 10, 1998, 6251-456-1DS. First release of the final data sheet. 2. Final data sheet: "HAL115 Hall Effect Sensor IC", May 7, 1997, 6251-414-1DS. First release of the final data sheet. 3. Final data sheet: "HAL114, HAL 115 Hall Effect Sensor Family, Dec. 20, 1999, 6251-456-2DS. Second release of the final data sheet. Major changes: - additional package SOT-89B - temperature range "A" replaced by "K" for HAL114 - additional temperature range "K" for HAL115 - outline dimensions for SOT-89A and TO-92UA changed - supply voltage range changed for HAL115
Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com Printed in Germany by Systemdruck+Verlags-GmbH, Freiburg (12/1999) Order No. 6251-456-2DS
All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH.
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Micronas
HAL 11x, HAL 5xx, HAL 62x
Data Sheet Supplement
Subject: Data Sheet Concerned:
Improvement of SOT-89B Package HAL 114, 115, 6251-456-2DS, Dec. 20, 1999 HAL 50x, 51x, 6251-485-1DS, Feb. 16, 1999 HAL 55x, 56x, 6251-425-1DS, April 6, 1999 HAL 621, 629, 6251-504-1DS, Feb. 3, 2000 No. 1/ 6251-531-1DSS July 4, 2000
Supplement: Edition:
Changes: - position tolerance of the sensitive area reduced - tolerances of the outline dimensions reduced
- thickness of the leadframe changed to 0.15 mm (old 0.125 mm) - SOT-89A will be discontinued in December 2000
sensitive area 4.55 0.15 0.3 1.7 2 y 0.2
4 0.2 min. 0.25 1 0.4 0.4 1.5 3.0 2 3 0.4
2.55 top view
1.15
branded side
0.06 0.04
SPGS0022-5-A3/2E
Position of sensitive area HAL 114, 115 HAL 50x, 51x HAL 621, 629 x y center of the package 0.95 mm nominal HAL 55x, HAL 56x
center of the package 0.85 mm nominal
Note: A mechanical tolerance of 0.05 mm applies to all dimensions where no tolerance is explicitly given. Position tolerance of the sensitive area is defined in the package diagram.
Micronas
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